ssf20n 50u h ? silikron semiconductor co.,ltd. 20 13 . 12 . 20 version : 1. 0 page 1 of 8 www.silikron.com main product characteristics features and benefits description absolute m ax rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 20 a i d @ tc = 100c continuous drain current, v gs @ 10v 1 2 .6 i dm pulsed drain current 80 p d @tc = 25c power dissipation 250 w linear derating factor 2.0 w/c v ds drain - source voltage 5 0 0 v v gs gate - to - source voltage 30 v e as single pulse avalanche energy @ l= 6 .5 m h 1433 mj i a s avalanche current @ l= 6.5 m h 21 a t j t stg operating junction and storage temperature range - 55 to + 150 c v dss 5 0 0 v r ds (on) 0 . 2 (typ . ) i d 20 a marking and p in assignment schematic d iagram these n - channel enhancement mode power field effect transistors are produced using silikron proprietary mosfet technology. this advanced technology has been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effici ency switch mode power supplies . to - 2 47 ? advanced process technology ? special designed for pwm, load switching and general purpose applications ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery
ss f 20n 50u h ? silikron semiconductor co.,ltd . 20 13 . 12 . 20 version : 1. 0 page 2 of 8 www.silikron.com thermal resistance symbol characteristics typ. max. units r jc junction - to - case 0.5 /w r j a junction - to - ambient ( t 10s ) 50 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage 5 0 0 v v gs = 0v, i d = 250a r ds(on) static drain - to - source on - resistance 0. 2 0. 2 7 v gs =10v, i d = 1 0 a 0 .47 t j = 1 25 c v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 2 50a 1 . 4 t j = 1 25 c i dss drain - to - source leakage current 1 a v ds = 5 0 0 v,v gs = 0v 50 t j = 125 c i gss gate - to - source forward leakage 1 00 na v gs = 3 0 v - 1 00 v gs = - 3 0 v q g total gate charge 4 8 nc i d = 2 0 a , v ds = 40 0 v , v gs = 10v q gs gate - to - source charge 1 6 q gd gate - to - drain("miller") charge 13 t d(on) turn - on delay time 1 8 ns v gs =10v, v ds = 25 0 v, r gen = 3.9 , r l = 12 t r rise time 6 4 t d(off) turn - off delay time 5 1 t f fall time 4 9 c iss input capacitance 2778 pf v gs = 0v v ds = 25 v ? = 1m hz c oss output capacitance 350 c rss reverse transfer capacitance 3. 1 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 20 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 80 a v sd diode forward voltage 1 . 0 1 . 4 v i s = 2 0 a, v gs =0v t rr reverse recovery time 5 70 n s t j = 25c , i f = 2 0 a , di/dt = 10 0a/s q rr reverse recovery charge 7.35 c
ss f 20n 50u h ? silikron semiconductor co.,ltd . 20 13 . 12 . 20 version : 1. 0 page 3 of 8 www.silikron.com test circuits and waveforms eas test circuit gate charge test circuit switch ing time test circu it switch ing waveforms n otes : calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the value of r j a is measured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ss f 20n 50u h ? silikron semiconductor co.,ltd . 20 13 . 12 . 20 version : 1. 0 page 4 of 8 www.silikron.com t ypical electrical and thermal characteristics fig ure 2. gate to source cut - off voltage figure 1 . typical output characteristics fig ure 3. drain - to - source breakdown voltage v s. case temperature figure 4 . normalized on - resistance vs. case temperature
ss f 20n 50u h ? silikron semiconductor co.,ltd . 20 13 . 12 . 20 version : 1. 0 page 5 of 8 www.silikron.com fig ure 5 . maximum drain current vs. case temperature t ypical electrical and thermal characteristics fig ure 6 . typical capacitance vs. drain - to - source voltage fig ure 7 . drain - to - source voltage v s. gate - to - source voltage figure 8 . maximum effective transient thermal impedance, junction - to - case
ss f 20n 50u h ? silikron semiconductor co.,ltd . 20 13 . 12 . 20 version : 1. 0 page 6 of 8 www.silikron.com mechanical data min nom max min nom max a 4.900 5.000 5.100 0.193 0.197 0.201 a1 2.310 2.410 2.510 0.091 0.095 0.099 a2 1.900 2.000 2.100 0.075 0.079 0.083 b 1.160 1.210 1.260 0.046 0.048 0.050 b2 1.960 2.010 2.060 0.077 0.079 0.081 b4 2.960 3.010 3.060 0.117 0.119 0.120 c 0.590 0.610 0.660 0.023 0.024 0.026 d 20.900 21.000 21.100 0.823 0.827 0.831 d1 16.250 16.550 16.850 0.640 0.652 0.663 d2 1.050 1.200 1.350 0.041 0.047 0.053 e 15.700 15.800 15.900 0.618 0.622 0.626 e1 13.100 13.300 13.500 0.516 0.524 0.531 e2 4.900 5.000 5.100 0.193 0.197 0.201 e3 2.400 2.500 2.600 0.094 0.098 0.102 e h 0.050 0.100 0.150 0.002 0.004 0.006 l 19.800 19.920 20.100 0.780 0.784 0.791 l1 - - 4.300 - - 0.169 p 3.500 3.600 3.700 0.138 0.142 0.146 p1 - - 7.300 - - 0.287 p2 2.400 2.500 2.600 0.094 0.098 0.102 q 5.600 5.800 6.000 0.220 0.228 0.236 s r t 9.800 - 10.200 0.386 - 0.402 t1 t2 t3 u 6.000 - 6.400 0.236 - 0.252 1 6 7 8 6 7 8 2 4 5 6 4 5 6 3 1 - 1.5 1 - 1.5 4 14 15 16 14 15 16 1.65ref 0.065ref 0.242bsc 0.50bsc 0.020bsc symbol dimension in millimeters dimension in inches 8.00ref 0.315ref 12.80ref 0.504ref 5.44bsc 0.214bsc 6.15bsc to247 package outline dimension
ss f 20n 50u h ? silikron semiconductor co.,ltd . 20 13 . 12 . 20 version : 1. 0 page 7 of 8 www.silikron.com ordering and marking information device marking: ssf 20n50u h package (available) to - 247 operating temperature range c : - 55 to 1 5 0 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to - 247 30 11 33 0 6 198 0 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 1 5 0 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ss f 20n 50u h ? silikron semiconductor co.,ltd . 20 13 . 12 . 20 version : 1. 0 page 8 of 8 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or containe d herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described p roducts in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independe nt device, th e customer should always evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that a ny or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval s ystem, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its us e or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, re fer to the "delivery specification" for the silikron product that you intend to use. customer service worldwide sales and se rvice : sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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